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| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
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PC900V | - | No description available. |
$0.0001 @ 10,000+ | 0 | - | - | - | SMD-6P | Get Instant Quote |
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PC900719DAF | - | No description available. |
$0.0179 @ 100+ | 0 | - | - | - | LQFP-100_14X14 | Get Instant Quote |
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|
PC900V0NSZXF | - | No description available. |
$0.0179 @ 200+ | 0 | - | - | - | Through hole | Get Instant Quote |
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PC900V | Sha | LED/PD+IC Viso:5000Vrms Vbs:1.1V | OC |
- | 0 | - | - | - | - | Catalog only |
Cross Reference
AI-suggested similar models will appear here when the AI bundle returns confident candidates.
Application Case
The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effe...
The EPC9006C development board is a 100V maximum device voltage, 7A maximum output current, half bridge with onboard gate drives, featuring the EPC2007C enhancement mode (eGaN®) field effec...
The EPC9005C development board is a 40V maximum device voltage, 7A maximum output current, half bridge with onboard gate drives, featuring the EPC2014C enhancement mode (eGaN®) field effect...
The EPC9001C development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effe...
The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015 enhancement mode (eGaN®) field effec...
The EPC9004C development board is a 200 V maximum device voltage, 2 A maximum output current, half bridge with onboard gate drives, featuring the EPC2012C enhancement mode (eGaN®) field eff...
FAQ
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