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| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
|
IRF 610 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 610A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 610B | Fairchild Semiconductor | DMOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 610S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 611 | International Rectifier, Fairchild Semiconductor, General Electric, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 612 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 613 | International Rectifier, Fairchild Semiconductor, General Electric, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 614 | International Rectifier, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 614A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 614B | Fairchild Semiconductor | DMOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 614S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 615 | International Rectifier, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 620 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, SGS, Samsung Semiconductor | Pre-Input Stages, Power Stages | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 620A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 620B | Fairchild Semiconductor | DMOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 620S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 621 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, SGS, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 6215 | International Rectifier | V-MOS | MOS P-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 622 | International Rectifier, Fairchild Semiconductor, General Electric, Samsung Semiconductor, SGS | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 623 | International Rectifier, Fairchild Semiconductor, General Electric, Samsung Semiconductor, SGS | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 624 | International Rectifier, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 624A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 624B | Fairchild Semiconductor | DMOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 624S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 625 | International Rectifier, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 626 | International Rectifier | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 627 | International Rectifier | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 630 | International Rectifier, General Electric, Motorola, Samsung Semiconductor, Fairchild Semiconductor, SGS, Mtm | Pre-Input Stages, Power Stages | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 630A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 630B | Fairchild Semiconductor | D-MOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 630M | STMicroelectronics | Mesh Overlay Power MOSFET, 200V 9A 0.35Ohm | MOS-N-FET-e* |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 630S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 631 | International Rectifier, General Electric, Motorola, Samsung Semiconductor, Fairchild Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 632 | International Rectifier, General Electric, Motorola, Samsung Semiconductor, Fairchild Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 633 | International Rectifier, General Electric, Samsung Semiconductor, Fairchild Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 634 | International Rectifier, Samsung Semiconductor | V-MOS, Power | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 634A | Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 634B | Fairchild Semiconductor, Mtm | V-MOS, L | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 635 | International Rectifier, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 636 | International Rectifier, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 637 | International Rectifier | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 640 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor, SGS, Mtm | Pre-Input Stages, Power Stages | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 641 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 642 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 643 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 644 | International Rectifier, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 645 | International Rectifier, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 646 | International Rectifier | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 647 | International Rectifier | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF640T | - | IRF640T N-channel 200V - 0.15 - 15A - TO-220 MESH OVERLAYTM Power MOSFET Gener |
- | 0 | - | - | - | - | Catalog only |
Cross Reference
V-MOS, L | MOS N-enh
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Application Case
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FAQ
Parameter and application questions will appear here when ready.
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