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| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
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EPC8002 | EPC | 65V 2A 530mΩ@500mA,5V N Channel - MOSFETs ROHS |
$0.6214 @ 1,000+ | 0 | ![]() |
MOSFETs | - | Get Instant Quote | |
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EPC8004 | - | Описание пока отсутствует. |
$2.8443 @ 1,000+ | 0 | - | - | - | Get Instant Quote | |
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EPC8009 | - | Описание пока отсутствует. |
$1.4786 @ 1,000+ | 0 | - | - | - | SMD,2.1x0.85mm | Get Instant Quote |
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EPC8010 | EPC | 100V 4A 160mΩ@500mA,5V N Channel - MOSFETs ROHS |
$0.9529 @ 1,000+ | 0 | ![]() |
MOSFETs | SMD-6P,2.1x0.9mm | Get Instant Quote |
Cross Reference
AI-suggested similar models will appear here when the AI bundle returns confident candidates.
Application Case
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs). The pur...
The EPC9068 development board is a 100 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives,featuring the EPC8010 enhancement mode (eGaN®) field effe...
The development board is in a half bridge topology with onboard gate drives, featuring the EPC8000 family of high frequency enhancement mode (eGaN®) field effect transistors (FETs). The pur...
The EPC9067 development board is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives,featuring the EPC8009 enhancement mode (eGaN®) field effec...
The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives,featuring the EPC8004 enhancement mode (eGaN®) field effec...
The EPC9065 is a high efficiency, Zero Voltage Switching (ZVS) differential mode Class-D amplifier development board that operates at, but is not limited to, 6.78 MHz (Lowest ISM band). The...
FAQ
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