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| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
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C2001L011 | ALJ | TO-92 Bipolar (BJT) ROHS |
$0.0100 @ 20,000+ | 1,000 | ![]() |
Bipolar (BJT) | TO-92 | Get Instant Quote | |
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C2001W1102S21 | - | Описание пока отсутствует. |
$0.0002 @ 10,000+ | 0 | - | - | - | SMD-2P | Get Instant Quote |
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C2001W1103S21 | - | Описание пока отсутствует. |
$0.0002 @ 2,000+ | 0 | - | - | - | SMD-3P | Get Instant Quote |
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C2001W1104S10 | - | Описание пока отсутствует. |
$0.0002 @ 10,000+ | 0 | - | - | - | SMD-4P | Get Instant Quote |
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C2001W1104S21 | - | Описание пока отсутствует. |
$0.0002 @ 10,000+ | 0 | - | - | - | SMD-4P | Get Instant Quote |
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C2001W1105S21 | - | Описание пока отсутствует. |
$0.0002 @ 10,000+ | 0 | - | - | - | SMD-5P | Get Instant Quote |
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C2001W1106S21 | - | Описание пока отсутствует. |
$0.0002 @ 1,000+ | 0 | - | - | - | SMD-6P | Get Instant Quote |
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C2001RS10311M0101RC | - | Описание пока отсутствует. |
$0.0179 @ 500+ | 0 | - | - | - | SMD-3P,P=2.0mm | Get Instant Quote |
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C2001RS10411M0101RC | - | Описание пока отсутствует. |
$0.0179 @ 200+ | 0 | - | - | - | SMD-4P,P=2.0mm | Get Instant Quote |
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C2001VD10201T0101PB | - | Описание пока отсутствует. |
$0.0179 @ 200+ | 0 | - | - | - | TH-2P | Get Instant Quote |
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C2001VS10311M0101RC | - | Описание пока отсутствует. |
$0.0002 @ 10,000+ | 0 | - | - | - | SMD-3P | Get Instant Quote |
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C2001VS10411M0101RC | - | Описание пока отсутствует. |
$0.0179 @ 200+ | 0 | - | - | - | SMD-4P | Get Instant Quote |
Cross Reference
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Application Case
The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effe...
The EPC9126HC development board is primarily intended to drive laser diodes with high current pulses with total pulse widths as low as 5 ns (10% of peak). The board is shipped with an EPC20...
These development boards are in a half-bridge topology with onboard gate drives, featuring the EPC2001 and EPC2021 eGaN® field effect transistors (FETs). The purpose of these development bo...
The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in para...
The EPC9017 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 20 A maximum output current in a half bridge configuration...
Demonstration circuit 2001A is a step-up DC/DC converter using two LTC3787EUFD dual-phase synchronous boost controllers in a parallel configuration for high current, high power 4-phase oper...
FAQ
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