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HGTG18N120BND
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Part #:HGTG18N120BND
Manufacturer:onsemi
Package:TO-247-3
Product Type:IGBT Transistors / Modules
RoHS: 
Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | HGTG18N120BND |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | TO-247-3 |
| Stock | 0 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tube-packed |
| Factory Pack Quantity | 450 |
| Type | NPT (non-penetrating type) |
| Operating Temperature | - |
| Collector Current (Ic) | 54A |
| Power Dissipation (Pd) | 390W |
| Turn?on Delay Time (Td(on)) | 23ns |
| Turn?on Switching Loss (Eon) | 1.9mJ |
| Total Gate Charge (Qg@Ic,Vge) | 165nC |
| Turn?off Delay Time (Td(off)) | 170ns |
| Turn?off Switching Loss (Eoff) | 1.8mJ |
| Diode Reverse Recovery Time (Trr) | 75ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,18A |
Documents & Compliance
No datasheet available.
RoHS:
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Component Summary
HGTG18N120BND by onsemi — IGBT Transistors / Modules; TO-247-3 package.
- Manufacturer
- onsemi
- Product Type
- IGBT Transistors / Modules
- Package
- TO-247-3