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GT60M324(Q)
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Part #:GT60M324(Q)
Manufacturer:TOSHIBA
Package:TO-3P-3
Product Type:IGBT Transistors / Modules
RoHS: 
Specifications (Specs)
| Manufacturer | TOSHIBA |
| Part Number | GT60M324(Q) |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | TO-3P-3 |
| Stock | 0 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tube-packed |
| Factory Pack Quantity | 25 |
| Type | - |
| Operating Temperature | - |
| Collector Current (Ic) | 60A |
| Power Dissipation (Pd) | 254W |
| Turn?on Delay Time (Td(on)) | 310ns |
| Input Capacitance (Cies@Vce) | 3.6nF@10V |
| Turn?on Switching Loss (Eon) | - |
| Diode Forward Voltage (Vf@If) | 1.3V@15A |
| Total Gate Charge (Qg@Ic,Vge) | - |
| Turn?off Delay Time (Td(off)) | 360ns |
| Turn?off Switching Loss (Eoff) | - |
| Diode Reverse Recovery Time (Trr) | 800ns |
| Collector-Emitter Breakdown Voltage (Vces) | 900V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 7.5V@60mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.7V@60A,15V |
Documents & Compliance
Datasheet (PDF)
RoHS:
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Component Summary
GT60M324(Q) by TOSHIBA — IGBT Transistors / Modules; TO-3P-3 package.
- Manufacturer
- TOSHIBA
- Product Type
- IGBT Transistors / Modules
- Package
- TO-3P-3