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NCE30TD60BF
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Part #:NCE30TD60BF
Manufacturer:Wuxi NCE Power Semiconductor
Package:TO-220F-3
Product Type:IGBT Transistors / Modules
RoHS: 
Specifications (Specs)
| Manufacturer | Wuxi NCE Power Semiconductor |
| Part Number | NCE30TD60BF |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | TO-220F-3 |
| Stock | 541 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tube-packed |
| Factory Pack Quantity | 50 |
| Type | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 60A |
| Power Dissipation (Pd) | 35.5W |
| Turn?on Delay Time (Td(on)) | 19ns |
| Input Capacitance (Cies@Vce) | 3.552nF@25V |
| Turn?on Switching Loss (Eon) | 0.36mJ |
| Diode Forward Voltage (Vf@If) | 1.7V@30A |
| Total Gate Charge (Qg@Ic,Vge) | 132nC@30A,15V |
| Turn?off Delay Time (Td(off)) | 166ns |
| Turn?off Switching Loss (Eoff) | 0.32mJ |
| Diode Reverse Recovery Time (Trr) | 178ns |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) | 1.7V@30A,15V |
Documents & Compliance
Datasheet (PDF)
RoHS:
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