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| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
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IRF 10 N40 | Mtm | High-voltage MOS-FET, 400V 10A 125W | MOS-N-FET-e* |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1010 | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1010 NL,NS,S | - | =IRF 1010..: | MOS-N-FET-e |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1010E | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1010EZ PBF | International Rectifier | MOSFET, 60V 84A, 140W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1010N | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1010S | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1010Z PBF | International Rectifier | MOSFET, 55V 94A, 140W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1104 | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1104L | International Rectifier | MOSFET, 40V 100A, 170W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1104S | International Rectifier | SMD, Power MOSFET, 40V 100A | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 120 | International Rectifier, Fairchild Semiconductor, Samsung Semiconductor | Power Amplifier, 100V 8A 40W | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 121 | International Rectifier, Fairchild Semiconductor, Samsung Semiconductor | Power Amplifier, 60V 8A 40W | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 122 | International Rectifier, Fairchild Semiconductor, Samsung Semiconductor | Power Amplifier, 100V 7A 40W | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 123 | International Rectifier, Fairchild Semiconductor, Samsung Semiconductor | Power Amplifier, 60V 7A 40W | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 130 | International Rectifier, General Electric, Motorola, Fairchild Semiconductor, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1302 L | International Rectifier | HEXFET Power MOSFET, N Kanal, 20V, 174A | MOS-N-FET-e |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1302 S | International Rectifier | HEXFET Power MOSFET, N Kanal, 20V, 174A | MOS-N-FET-e |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 130R ..133R | - | Avalanche Energy Rated |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 131 | International Rectifier, General Electric, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1310 NL,NS | - | =IRF 1310N: | MOS-N-FET-e |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1310N | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1310S | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1312 PBF | International Rectifier | MOSFET, 80V 95A, 210W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 132 | International Rectifier, General Electric, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 133 | International Rectifier, General Electric, Fairchild Semiconductor, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 140 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1404 | International Rectifier | V-MOS | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1404Z PBF | International Rectifier | MOSFET, 40V 190A, 220W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1405 | International Rectifier | MOSFET, 55V 169A, 330W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1405 PBF | International Rectifier | MOSFET, 55V 169A, 330W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1405Z PBF | International Rectifier | MOSFET, 55V 150A, 230W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1407 PBF | International Rectifier | MOSFET, 75V 130A, 330W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 140R ..143R | - | Avalanche Energy Rated |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 141 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 142 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 143 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 150 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | V-MOS, L | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1503 | International Rectifier | Automotive Power MOSFET, HEXFET® | MOS-N-FET-e |
- | 0 | - | - | fet | - | Catalog only |
|
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IRF 1503 L | International Rectifier | Automotive Power MOSFET, HEXFET® | MOS-N-FET-e |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 1503 S | International Rectifier | SMD, Automotive Power MOSFET, HEXFET® | MOS-N-FET-e |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 150R ..153R | - | Avalanche Energy Rated |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF 151 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 152 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Motorola, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 153 | International Rectifier, SGS, Fairchild Semiconductor, General Electric, Samsung Semiconductor | MOS-FET ENHANCEMENT, N-CHANNEL | MOS N-enh |
- | 0 | - | - | ic | - | Catalog only |
|
|
IRF 1607 PBF | International Rectifier | MOSFET, 75V 142A, 380W | MOS N-enh |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF1010NL,NS | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
|
|
IRF1310NL,NS | - | MOS-FET ENHANCEMENT, N-CHANNEL |
- | 0 | - | - | fet | - | Catalog only |
Cross Reference
AI-suggested similar models will appear here when the AI bundle returns confident candidates.
Application Case
The IRFZ44N Discrete Device Test Board (silkscreened IRFZ44N DISCRETE DEVICE TEST BOARD / N-CHANNEL POWER MOSFET) is an open-hardware characterization and prototyping evaluation platform de...
The IRF530 Discrete Device Test Board (silkscreened IRF530 DISCRETE DEVICE TEST BOARD / N-CHANNEL POWER MOSFET) is an open-hardware characterization and prototyping evaluation platform desi...
The IRF540N Discrete Device Test Board (silkscreened IRF540N DISCRETE DEVICE TEST BOARD / N-CHANNEL POWER MOSFET) is an open-hardware characterization and prototyping evaluation platform de...
The IRF510 Discrete Device Test Board (silkscreened IRF510 DISCRETE DEVICE TEST BOARD / N-CHANNEL POWER MOSFET) is an open-hardware characterization and prototyping evaluation platform desi...
The Bosch Sensortec BMP581 Shuttle Board 3.0 is a high-precision barometric pressure sensor evaluation PCB developed by Bosch Sensortec featuring the BMP581 digital barometric pressure and...
The SPS30 Evaluation Kit (SEK-SPS30) is Sensirion's official evaluation platform for the SPS30 optical particulate matter (PM1.0, PM2.5, PM4.0, PM10.0) sensor. Utilizing laser scattering me...
FAQ
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