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Manufacturer
Package
Product Type
Stock
| Image | Part Number | Manufacturer | Description | Pricing (USD) | Stock | Datasheet | RoHS | Product Type | Package / Case | Quote |
|---|---|---|---|---|---|---|---|---|---|---|
|
|
GT600P15M | - | Noch keine Beschreibung verfügbar. |
$0.6829 @ 208+ | 100 | - | - | - | TO-263 | Get Instant Quote |
|
GT600P15D5 | GOFORD | DFN-8L(5x6) MOSFETs ROHS |
$0.5929 @ 104+ | 95 | - |  |
MOSFETs | DFN-8L(5x6) | Get Instant Quote |
|
|
GT600P15MM | GOFORD | TO-263 MOSFETs ROHS |
$0.6829 @ 208+ | 95 | - | |
MOSFETs | TO-263 | Get Instant Quote |
|
GT60N10 | GOFORD | TO-220 MOSFETs ROHS |
$0.1290 @ 10,000+ | 80 | |
MOSFETs | TO-220 | Get Instant Quote | |
|
|
GT600P15T | GOFORD | TO-220 MOSFETs ROHS |
$0.6771 @ 208+ | 50 | - | |
MOSFETs | TO-220 | Get Instant Quote |
|
|
GT60L16M2K4 | - | Noch keine Beschreibung verfügbar. |
$1.0029 @ 990+ | 19 | - | - | SOIC-8-208mil | Get Instant Quote | |
|
|
GT60N12T | GOFORD | 120V 6A 10.6mΩ@10V 140W 2.5V N Channel TO-220 MOSFETs ROHS |
$0.1800 @ 5,000+ | 0 | - | |
MOSFETs | TO-220 | Get Instant Quote |
|
GT60M324(Q) | TOSHIBA | 254W 60A 900V TO-3P-3 IGBT Transistors / Modules ROHS |
$3.8900 @ 104+ | 0 | |
IGBT Transistors / Modules | TO-3P-3 | Get Instant Quote | |
|
|
GT 60 J101 | Toshiba | L, 600V, 60A, 200W, 400/500ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 J101 | Toshiba | L | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 60 J321 | - | int. Freilauf-/Free-wheel Diode(E->C) | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 J321 | Toshiba | L, 600V, 60A, 200W, 350/800ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 J322 | - | int. Freilauf-/Free-wheel Diode(E->C) | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 J322 | Toshiba | L, 600V, 60A, 200W, 350/1500ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M102 | Toshiba | L, 900V, 60A, 200W, 350/800ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M102 | Toshiba | L | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 60 M103 | Toshiba | L, 900V, 60A, 200W, 350/800ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M103 | Toshiba | L | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 60 M104 | Toshiba | L, 900V, 60A, 200W, 350/500ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M104 | Toshiba | L | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 60 M301 | Toshiba | =GT 50J101: int. FW Diode(E->C,<2,5µs) | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M301 | - | int. FW-Diode (E->C, <2,5µs) | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 60 M303 | - | int. Freilauf-/Free-wheel Diode(E->C) | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 M303 | Toshiba | L, 900V, 60A, 170W, 460/600ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 N321 | - | int. Freilauf-/Free-wheel Diode(E->C) | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 N321 | Toshiba | L, 1000V, 60A, 170W, 330/700ns | MOS-N-IGBT |
- | 0 | - | - | ic | - | Catalog only |
|
|
GT 60 N321 | Toshiba | S-L, integr. Free-wheel Diode | IGBT N |
- | 0 | - | - | fet | - | Catalog only |
|
|
GT 600 | Gdc | NF-L | Si-N |
- | 0 | - | - | transistor | - | Catalog only |
|
|
GT 605 | Taiwan Semiconductor | Glass Passivated Rectifiers, 50V 6A | Si-Di |
- | 0 | - | - | diode | - | Catalog only |
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Where can I buy GT60?
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