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NCV8402AMNWT1G
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Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | NCV8402AMNWT1G |
| Product Type | MOSFETs |
| RoHS | Yes |
| Package / Case | TDFN-6-EP(3x3) |
| Stock | 1,054 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -40℃~+150℃ |
| Power Dissipation (Pd) | 0.76W |
| Drain Source Voltage (Vdss) | 42V |
| Continuous Drain Current (Id) | 1.28A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.3V@150uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 165mΩ@10V,1.7A |
Documents & Compliance
Datasheet (PDF)
RoHS: 
Alternative Parts & Cross Reference
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Component Summary
NCV8402AMNWT1G by onsemi — MOSFETs; TDFN-6-EP(3x3) package.
- Manufacturer
- onsemi
- Product Type
- MOSFETs
- Package
- TDFN-6-EP(3x3)