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IPD135N03LG
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Specifications (Specs)
| Manufacturer | Infineon Technologies |
| Part Number | IPD135N03LG |
| Product Type | MOSFETs |
| RoHS | Yes |
| Package / Case | TO-252 |
| Stock | 1,848 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 2500 |
| Type | 1 N-channel |
| Operating Temperature | -55℃~+175℃ |
| Power Dissipation (Pd) | 31W |
| Total Gate Charge (Qg@Vgs) | 6.4nC@10V |
| Drain Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss@Vds) | 1nF@30V |
| Continuous Drain Current (Id) | 30A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF@30V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 13.5mΩ@10V,30A |
Documents & Compliance
Datasheet (PDF)
RoHS: 
Alternative Parts & Cross Reference
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Component Summary
IPD135N03LG by Infineon Technologies — MOSFETs; TO-252 package.
- Manufacturer
- Infineon Technologies
- Product Type
- MOSFETs
- Package
- TO-252