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CED12N10L-VB
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Specifications (Specs)
| Manufacturer | VBsemi Elec |
| Part Number | CED12N10L-VB |
| Product Type | MOSFETs |
| RoHS | Yes |
| Package / Case | TO-251 |
| Stock | 60 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tube-packed |
| Factory Pack Quantity | 80 |
| Type | 1 N-channel |
| Operating Temperature | -55℃~+175℃ |
| Power Dissipation (Pd) | 61W |
| Total Gate Charge (Qg@Vgs) | 20nC@10V |
| Drain Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss@Vds) | 892pF@25V |
| Continuous Drain Current (Id) | 15A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF@25V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - |
Documents & Compliance
Datasheet (PDF)
RoHS: 
Alternative Parts & Cross Reference
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Component Summary
CED12N10L-VB by VBsemi Elec — MOSFETs; TO-251 package.
- Manufacturer
- VBsemi Elec
- Product Type
- MOSFETs
- Package
- TO-251